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1000V 12A 0.900
APT10090BLL APT10090SLL
BLL D3PAK
TO-247
POWER MOS 7
(R)
R
MOSFET
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are addressed with Power MOS 7 by significantly lowering RDS(ON) (R) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate Charge, Qg
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current
1
SLL
* Increased Power Dissipation * Easier To Drive * TO-247 or Surface Mount D3PAK Package
D G S
All Ratings: TC = 25C unless otherwise specified.
APT10090 UNIT Volts Amps
1000 12 48 30 40 298 2.4 -55 to 150 300 12 30
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/C C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
1210
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) R DS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) On State Drain Current
2
MIN
TYP
MAX
UNIT Volts Amps
1000 12 0.90 100 500 100 3 5
(VDS > I D(on) x R DS(on) Max, VGS = 10V)
2
Drain-Source On-State Resistance
(VGS = 10V, 6A)
Ohms A nA Volts
7-2003 050-7002 Rev C
Zero Gate Voltage Drain Current (VDS = 1000V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
APT10090BLL - SLL
Test Conditions
VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 500V ID = 12A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 500V ID = 12A @ 25C RG = 1.6 6 INDUCTIVE SWITCHING @ 25C VDD = 670V, VGS = 15V ID = 12A, RG = 5 6 INDUCTIVE SWITCHING @ 125C VDD = 670V VGS = 15V ID = 12A, RG = 5
MIN
TYP
MAX
UNIT
1969 332 55 71 12 47 9 5 23 4 334 77 672 100 J ns
nC pF
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol IS ISM VSD t rr Q rr
dv/ dt
Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage
1 2
MIN
TYP
MAX
UNIT Amps Volts ns C
12 48 1.3 700 9.0 10
(Body Diode) (VGS = 0V, IS = -ID12A)
Reverse Recovery Time (IS = -ID12A, dl S/dt = 100A/s) Reverse Recovery Charge (IS = -ID12A, dl S/dt = 100A/s) Peak Diode Recovery
dv/ dt 5
V/ns
THERMAL CHARACTERISTICS
Symbol RJC RJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT C/W
0.42 40
1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
4 Starting Tj = +25C, L = 16.81mH, RG = 25, Peak IL = 12A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID12A di/dt 700A/s VR VDSS TJ 150C 6 Eon includes diode reverse recovery measured in accordance wtih JEDEC standard JESD24-1. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein. 0.45
, THERMAL IMPEDANCE (C/W)
0.40 0.35 0.30 0.25
0.9
0.7
0.5 0.20 0.15 0.10 0.05 0 10-5 0.1 0.05 10-4 SINGLE PULSE 0.3
Note:
PDM t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC
050-7002 Rev C
7-2003
Z
JC
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
30
APT10090BLL - SLL
ID, DRAIN CURRENT (AMPERES)
RC MODEL Junction temp. ( "C) 0.164 Power (Watts) 0.257 Case temperature 0.125F 0.00592F
25 20 VGS =15,10V& 7.5V 7V 6.5 15 6V 10 5.5V 5V 0 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.40
V
GS
5
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 30 TJ = -55C
ID, DRAIN CURRENT (AMPERES)
NORMALIZED TO = 10V @ I = 6A
D
25
1.30 1.20
20 15
TJ = +125C TJ = +25C
1.10
VGS=10V VGS=20V
10
VDS> ID (ON) x RDS(ON) MAX. 250 SEC. PULSE TEST @ <0.5 % DUTY CYCLE
1.00
5 0
0.90 0.80
0 1 2 3 4 5 6 7 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS
0
5 10 15 20 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
12
BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)
I V
D
1.15
ID, DRAIN CURRENT (AMPERES)
10
1.10
8 6
1.05
1.00
4
0.95 0.90 0.85 -50
2 0 25
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED)
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2.5
= 6A = 10V
GS
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2
2.0
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
1.1
1.0 0.9 0.8
1.5
1.0
0.5
0.7 0.6 -50
0.0 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, RDS(ON) vs. TEMPERATURE
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-7002 Rev C
7-2003
Typical Performance Curves
48
ID, DRAIN CURRENT (AMPERES)
OPERATION HERE LIMITED BY RDS (ON)
APT10090BLL - SLL
10,000
100S
C, CAPACITANCE (pF)
10
Ciss 1,000
Coss 100 Crss
1
1mS 10mS TC =+25C TJ =+150C SINGLE PULSE
.1 1 10 100 1000 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA 16
I
D
= 12A
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 200 100
10
12
VDS=200V VDS=500V
TJ =+150C TJ =+25C 10
8
VDS=800V
4
0 0 10
20 30 40 50 60 70 80 90 100 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE 60 td(off) 50
1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 40 tf 30
td(on) and td(off) (ns)
40
V
DD G
= 670V
R
= 5
30
T = 125C
J
tr and tf (ns)
L = 100H
20
V
DD G
= 670V
R
= 5
20 10 10 0 5 15 20 ID (A) FIGURE 14, DELAY TIMES vs CURRENT
V
DD G
T = 125C
J
tr
L = 100H
td(on) 0
10
10 15 20 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 1200
0
5
1200
= 670V R = 5
1000
SWITCHING ENERGY (J)
Eon
SWITCHING ENERGY (J)
T = 125C
J
1000
L = 100H
800 600 400
E ON includes diode reverse recovery.
800 600
Eon
7-2003
400 Eoff
V I
DD
= 670V
D J
= 12A
200 0
Eoff
T = 125C
200 0
050-7002 Rev C
L = 100H EON includes diode reverse recovery.
15 20 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT
5
10
10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
0
5
Typical Performance Curves
Gate Voltage
APT10090BLL - SLL
10 % td(on) tr 90% 5% 10 % 5%
Drain Voltage
90%
T = 125 C J
Gate Voltage
t
T = 125 C J
d(off)
Drain Current
Drain Voltage
90%
10% tf 0
Drain Current
Switching Energy
Switching Energy
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT15DF120B
V DD
IC
V CE
G D.U.T.
Figure 20, Inductive Switching Test Circuit
TO-247 Package Outline
Drain (Heat Sink)
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC
D PAK Package Outline
4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05 (.632) 13.41 (.528) 13.51 (.532)
3
15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
1.04 (.041) 1.15 (.045)
Drain
20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150)
Revised 4/18/95
13.79 (.543) 13.99 (.551)
Revised 8/29/97
11.51 (.453) 11.61 (.457)
0.46 (.018) 0.56 (.022) {3 Plcs}
4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055)
19.81 (.780) 20.32 (.800)
Gate Drain Source
5.45 (.215) BSC {2 Plcs.}
Heat Sink (Drain) and Leads are Plated
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
Dimensions in Millimeters and (Inches)
Source Drain Gate Dimensions in Millimeters (Inches)
APT's devices are covered by one or more of the following U.S.patents:
4,895,810 5,256,583
5,045,903 4,748,103
5,089,434 5,283,202
5,182,234 5,231,474
5,019,522 5,434,095
5,262,336 5,528,058
050-7002 Rev C
7-2003
0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112)
1.27 (.050) 1.40 (.055) 1.98 (.078) 2.08 (.082)
1.22 (.048) 1.32 (.052)
3.81 (.150) 4.06 (.160) (Base of Lead)

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